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| SEMICONDUCTOR TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES High Capacitance Ratio : C1V/C5V=5.0(Min.) Excellent C-V Characteristics. Variations of Capacitance Values is Little. A KDV1471 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE L E B L DIM A D B C D E G H J K MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 - 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 G Small Package. 2 H 1 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range ) SYMBOL VR Tj Tstg RATING 16 150 -55 150 UNIT V C N P P L M N P M 3 1. ANODE 2. NC 3. CATHODE 2 1 K SOT-23 GRADE A B C CAPACITANCE(CIV) 30.16~33.63 33.30~37.13 36.77~40.99 Type Name UNIT pF Marking Grade Lot No. W3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance Ratio Series Resistance SYMBOL VR IR C1V C4.5V K rS TEST CONDITION IR=10 A VR=10V VR=1V, f=1MHz VR=4.5V, f=1MHz C1V/C5V, f=1MHz VR=1.5V, f=100MHz MIN. 16 30.16 6.2 5.0 TYP. 35.60 7.7 0.8 MAX. 50 40.99 9.2 1.0 UNIT V nA pF 2001. 5. 28 Revision No : 1 J 1/2 KDV1471 CR - V 100 CAPACITANCE C (pF) 50 30 1n f=1MHz I R - VR REVERSE CURRENT I R (A) Ta=25 C 100p 10p 1p 100f 10f Ta=85 C Ta=55 C Ta=25 C 10 5 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 REVERSE VOLTAGE VR (V) REVERSE VOLTAGE VR (V) Q - VR 500 300 FIGURE OF MERIT Q Hz 0M z f=5 H 0M f=7 0MHz 0 f=1 rs - f 1 VR =1.5V Ta=25 C Ta=25 C 100 50 30 SERIES RESISTANCE rs () 0.7 10 0 1 2 3 4 5 0.5 20 50 100 300 500 1K REVERSE VOLTAGE V R (V) FREQUENCY f (MHz) C(Ta)/C(25 C) - VR (V) 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 0 1 2 3 4 5 Ta=85 C Ta=55 C Ta=25 C Ta=-15 C Ta=-55 C (ppm/ C) - VR 1k 700 500 300 VARIATION OF CAPACITANCE C(Ta)/C(25 C) VARIATION OF CAPACITANCE (ppm/ C) f=1MHz f=1MHz 100 Ta=-55 C~+85 C 0 1 2 3 4 5 REVERSE VOLTAGE V R (V) REVERSE VOLTAGE V R (V) 2001. 5. 28 Revision No : 1 2/2 |
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